| 摘要 |
PURPOSE:To obtain an epitaxially grown monoatomic layer in a short time by supplying a gaseous seed contg. one component element of a compd. semiconductor to be grown to each of plural reaction tubes and moving a substrate holder between growth chambers. CONSTITUTION:A source boat 2 for one component element of a compd. semicon ductor to be grown is placed on the upstream side of the upper growth chamber 1, a gaseous reactant is supplied and allowed to react and the formed gaseous compd. semiconductor is carried to the downstream side. Meanwhile, the gaseous component element of the compd. semiconductor is supplied to the lower growth chamber 3 and allowed to react. Then a substrate crystal 4 is set in the growth chamber 3 and heated to the growth temp. and then the substrate crystal 4 is moved 6 to the growth chamber 1 to absorb the component element of the compd. semiconductor and then moved 6 to the growth chamber 3 to react and epitaxially grow the substrate crystal 4. The process is repeated. Consequent ly, the thickness of the grown layer can be controlled in accordance with the number of movements and a good-quality epitaxially grown monoatomic layer is obtained.
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