| 摘要 |
PURPOSE:To form a good photosensitive body by setting the difference of the energy gaps phi of the Fermi level and valance band between at least one intermediate layer between adjacent layers and the layer adjacent thereto, between the two electric charge generating layers on one side of an electric charge transfer layer to prescribed eV or below. CONSTITUTION:The charge transfer layer 2 consisting of a-SiC:H, etc., contg. at least one kind of C, N and O, the intermediate layer 6, the layer 13 consisting of a-SiN:H, the intermediate layer 7, an a-SiGe:H layer 5, and a surface reforming layer contg. C, N, O or Ge are laminated on a conductive backing substrate 1. The a-SiGe:H layer 3 exhibits high sensitivity in the long wavelength region of a prescribed range according to irradiation of light. The a-SiH layer 4 improves the surface potential characteristic of this photosensitive body. The intermediate layers are respectively provided between the layers 5-3 and 3-2 and the difference of phi between the respective layers is set at, for example, <=0.1eV by these intermediate layers. The photosensitive body having the high sensitivity and good printing resistance is thus obtd. |
