| 摘要 |
PURPOSE:To improve reflection efficiency, and to increase a luminous output by forming at least one of reflecting mirrors in the structure of a semiconductor multilayer film and shaping at least any one of the reflecting mirrors in a structure in which it is brought into contact with a light-emitting layer. CONSTITUTION:A first reflecting layer 102 is laminated on a GaAs substrate 101, and an n-type GaAs light-emitting layer 103 is laminated on the layer 102. Zinc as an impurity is thermally diffused partially from the surface of the substrate on the laminating side to the substrate 101 to form a p-type region 104, and a p-n junction 108 vertical to the substrate 101 is shaped. A second reflecting layer 105 is laminated onto the surface of the p-n junction 108, and a p-side electrode metal 106 is arranged onto the p-type region 104 and an n-side electrode metal 107 onto the n-type GaAs 103. GaAs layers 202 and Al-Ga- As 201 are laminated alternately in the first reflecting layer 102, and p-type GaAs layers 204 and p-type Al-Ga-As 203 are formed through the diffusion of the impurity, thus shaping a multilayer structure. |
