| 摘要 |
<p>PURPOSE:To lower the resistance of a gate wiring and to improve the rise and fall characteristics of the signal to be impressed to a gate electrode by forming the gate wiring of a metallic wiring for which a metal having the resistivity lower than the resistivity of Ta is used and a Ta wiring which covers the metallic wiring. CONSTITUTION:The gate wiring 4 of the thin-film transistor array formed by using a gate insulating film or an anodized Ta film for a part of the gate insulating film is formed of the metallic wiring 2 for which the metal having the resistivity lower than the resistivity of the Ta is used and the Ta wiring which covers the metallic wiring 2. The metal to be used for the metallic wiring is preferably a high melting metal or the alloys of the high melting metals, for which Mo, W/Mo alloy, W/Ta alloy, Mo/Ta alloy, etc., in addition to W are usable. The resistance of the gate wiring 4 is thereby decreased and the rise and fall characteristics of the signal to be impressed to the gate electrode 6 are improved. Since the Ta film is thin, there is no problem in coverability of steps.</p> |
