发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PURPOSE:To allow chips to be located at various places and transmit a power source voltage to each chip at a low impedance by providing a means to transmit the power source voltage of leads to a plurality of conductors which are located outside the chips and transmitting the power source voltage to the chips through these conductors. CONSTITUTION:A power source high voltage Vcc is transmitted from a lead 4a to a bonding pad 2a and a die pad 3b on a chip and the die pad 3b is connected to a bonding pad 2c which is located far away from the bonding pad 2a. A power source is supplied from bonding pads 2a and 2c to a power source high voltage wiring region on the chip and the effect of wiring resistance on the chip becomes small. Further, a power source low voltage Vss is supplied at a low impedance on the chip in the same manner. Capacitance C generated by the die pads 3b and 3c as well as an insulating film 6a acts as a decoupling capacitance.
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申请公布号 |
JPH02152269(A) |
申请公布日期 |
1990.06.12 |
申请号 |
JP19880306560 |
申请日期 |
1988.12.02 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
FUKIAGE TAKAHIKO;SUZUKI TOMIO |
分类号 |
H01L23/12;H01L21/52;H01L25/00;H01L27/01 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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