| 摘要 |
PURPOSE:To prevent the increase in parasitic resistance in a MOS transistor from occurring without incurring the condensation of silicide film even if it is heat-treated at high temperature by a method wherein metallic layers are formed between source.drain layers and metallic nitride layers. CONSTITUTION:The title semiconductor device is provided with a gate electrode 4 and source.drain diffused layers 61, metallic nitride layers 62 formed at least on the source.drain diffused layer 61 and metallic silicide films 7 further formed on the metallic nitride layers 62. For example, a gate oxide film 3 is formed on the specific position in an element formation region on an n type silicon substrate 1; a gate electrode 4 comprising polycrystalline silicon diffused with phosphorus in high concentration is formed on the gate oxide film 3; and then a sidewall insulating film 5 is formed on the side of the gate electrode 4. Furthermore, the source.drain diffused layers 61 are formed from the ends of the gate electrode 4 in the substrate 4 extending over the element isolation regions 2; the Tin layers 62 and TiSi2 films 7 are successively formed; and further BPSG films 8 are formed.
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