| 摘要 |
PURPOSE:To prevent impurities such as zinc and the like contained in a substrate from being deposited or mixing into a growth layer by a method wherein a non-doped layer is interposed between a semiconductor substrate and a growth layer. CONSTITUTION:A non-doped GaAlAs layer 2, a P-GaAlAs layer 3, an N-GaAlAs layer 4, and an N-GaAlAs layer 5 are formed on a GaAs substrate 1. As mentioned above, the non-doped layer 2 is interposed between the substrate 1 and a growth layer, whereby impurities zinc or the like contained in the substrate 1 can be prevented from being dissolved into a liquid through a melting phenomenon in a liquid phase epitaxial growth method and being taken in the GaAlAs growth layer 3, in result the P-GaAlAs layer 3 can be controlled in impurity concentration as prescribed. |
