MANUFACTURING METHOD OF GUIDE-RING

摘要

The forming method for guard ring for CMOS integrated circuit comprises (A) etching desired part after depositing photoresistor (3) on the substrate (1) on which P well (2) is formed, (B) injecting P+ ion thereon to form P+ layer (4), (C) depositing SiO2 insulating film (5) after removing photoresistor (3), (D) etching SiO2 film (5) and removing photoresistor (3) after depositing continuously photoresistor (3) on SiO2 film (5), (E) forming guard ring (8) by depositing polysilicon (6) and silicide (7) in order, (F) depositing photoresistor (3), and (G) removing photoresister (3) after etching desired part.