| 摘要 |
A method of forming an amorphous carbon layer using a cross type hydrocarbon compound as a precursor and a method of forming a low-k dielectric layer using the same are disclosed. The present invention includes a step (a) of vaporizing a precursor containing a cross type hydrocarbon compound, a step (b) of supplying the vaporized precursor and a additive gas into a reaction chamber via a shower head, wherein the precursor and the additive gas are changed into plasma state, and a step (c) of depositing the amorphous carbon layer for the hard mask or the low-k dielectric in the reaction chamber.
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