发明名称 STATE-MONITORING MEMORY ELEMENT
摘要 Embodiments of the invention relate to a state-monitoring memory element. The state-monitoring memory element may have a reduced ability to retain a logic state than other regular memory elements on an IC. Thus, if the state-monitoring memory elements fails or loses state during testing, it may be a good indicator that the IC's state retention may be in jeopardy, possibly requiring the IC to be reset. The state-monitoring memory element may be implemented by degrading an input voltage supply to the state-monitoring memory element across a diode and/or a transistor. One or more current sources may be used to stress the state-monitoring memory element. A logic analyzer may be used to analyze the integrity of the state-monitoring memory element and trigger appropriate actions in the IC, e.g., reset, halt, remove power, interrupt, responsive to detecting a failure in the state-monitoring memory element. Multiple state-monitoring memory elements may be distributed in different locations on the IC for better coverage.
申请公布号 US2008259702(A1) 申请公布日期 2008.10.23
申请号 US20070857947 申请日期 2007.09.19
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 SHEETS MICHAEL;WILLIAMS TIMOTHY
分类号 G11C29/04 主分类号 G11C29/04
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