CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

摘要

A chemically amplified positive resist composition is provided to form a good pattern profile independent of a substrate by satisfying high sensitivity, high resolution, and storage stability required in electronic beam lithography. A patterning method includes the steps of: applying a chemically amplified positive resist material composition onto a quartz substrate having a semi-permeable membrane and/or a light-shielding membrane using sputtering, wherein the chemical amplified positive resist material composition comprises at least one compound represented by the following formula (1d) which generates an acid upon irradiation of radiation or electronic beams, a polymer of which solubility in an alkali developer is changed by an action of an acid, and a basic compound; heating the coated substrate, and irradiating the coated substrate with high energy rays; and performing development using a developer.