| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor having high mobility, a bipolar transistor having a well-balanced mobility and/or a balanced on-current, and the like. SOLUTION: The bipolar transistor 1 includes a p-type semiconductor region 2, an n-type semiconductor region 3, a first terminal 4 in contact with both the p-type semiconductor region 2 and the n-type semiconductor region 3, and a second terminal 5 in contact with both the p-type semiconductor region 2 and the n-type semiconductor region 3. The p-type semiconductor region 2 hardly overlaps the n-type semiconductor region 3. COPYRIGHT: (C)2009,JPO&INPIT |
