| 摘要 |
Method for realising a hosting structure of nanomettric elements (A, B) comprising the steps of depositing on an upper surface (12) of a substrate (10), of a first material, a block-seed (15) having at least one side wall (18). Depositing on at least one portion of sad surface (12) and on the block-seed (15) a first layer (20), of predetermined thickness of a second material, and subsequently selectively and anisotropically etching it realising a spacer-seed (22) adjacent to the side wall (18). The method thus providing to repeat n times, with n >= 2, a step comprising a deposition on the substrate (10) of a layer (20, 30) of a predetermined material followed by a selective and anisotropic etching of the layer with realisation of at least one relative spacer (25, 35). This predetermined material being different for each pair of consecutive depositions. The above n steps defining at least one multilayer body (50, 150, 250). The method thus providing the step of selectively etching the multilayer body (50, 150, 250) removing a fraction of the spacers realising at least one plurality of nanometric hosting seats (40), the remaining fraction of the spacers realising contact terminals for a plurality of molecular transistors hosted in said hosting seats (40). |
