| 摘要 |
An integrated memory transistor and a memory unit including a plurality of integrated memory transistors is disclosed. Generally, the integrated memory transistor includes an electron source, a channel region, a control region, a charge storage region, a source-side pocket doping region, and a drain-side pocket doping region. The electron source is operable to transport electrons to the channel region when the integrated memory transistor operates in a read mode. Further, the electron source includes a drain terminal region and a source terminal region. The channel region is arranged between the drain terminal region and source terminal region. The charge storage region is arranged between the control region and the channel region. The source-side doping region is arranged nearer to the source terminal region than to the drain terminal region. The drain-side pocket doping region is arranged asymmetrical to the source-side pocket doping region.
|
