发明名称 Charged particle beam lithography apparatus and method
摘要 A charged particle beam lithography apparatus includes a charged particle beam generation source; a charged particle beam forming portion through which the charged particle beam is transmitted; a first deflector arranged between the charged particle beam forming portion and the charged particle beam generation source; a second deflector arranged between the first deflector and the charged particle beam forming portion; an imaging unit obtaining image data of the aperture; and a control portion calculating amounts of excitation of the first and second deflector based on the image data. The charged particle beam is deflected by the first deflector to intersect the optical axis. The deflected charged particle beam is deflected by the second deflector to advance on the optical axis. The control portion controls the first and second deflectors based on the calculated amounts of excitation.
申请公布号 US7432515(B2) 申请公布日期 2008.10.07
申请号 US20060337501 申请日期 2006.01.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NISHIMURA SHINSUKE
分类号 H01J37/304 主分类号 H01J37/304
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