| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor wafer in which a slip line is not generated, even if rapid temperature change is imparted thereto. SOLUTION: The compound semiconductor wafer consists of a compound semiconductor and contains impurities to reduce dislocation density with higher concentration in an outer edge portion 2 than in the interior region 3. COPYRIGHT: (C)2008,JPO&INPIT
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