| 摘要 |
<p>A method for fabricating a flash memory device is provided to reduce damage to a tunnel insulation layer caused by a plasma process or a cleaning process by forming a sidewall oxide layer on the sidewall of a tunnel insulation layer by a sidewall oxide process before a trench is formed in a peripheral circuit region. An insulation layer and a hard mask pattern are formed on a semiconductor substrate(100) having a cell region and a peripheral circuit region. The insulation layer and the semiconductor substrate in the cell region are etched to form a first trench(110). A first sidewall oxide layer(112) is formed in the first trench. The insulation layer and the semiconductor substrate in the peripheral circuit region are etched to form a second trench(116). A second sidewall oxide layer(126) is formed on the first oxide layer and in the second trench. The sidewall oxide layer formed in the first trench in the cell region can have a stack structure composed of the first and second sidewall oxide layers.</p> |
