| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reliably forms a channel region reaching an emitter region in an on state, and can suppress the occurrence of a latch-up phenomenon. SOLUTION: There is the emitter region 60 (first semiconductor region), where the region is formed while facing the surface of a semiconductor layer and includes n-type (first-conductivity-type) impurities. The amount of impurities included per unit depth of the emitter region 60 changes depending on depth, and the depth, where the amount of impurities is maximized, is offset to a part deeper than a surface 11a of a semiconductor layer 11. COPYRIGHT: (C)2008,JPO&INPIT
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