| 摘要 |
A gate electrode 20 and first field plates 22 a to 22 d and 23 are provided on a field oxide film 19. The gate electrode 20 and first field plates 22 a to 22 d and 23 are covered with an insulating film 24. A high-voltage wiring conductor 28 is provided on the insulating film 24. A shielding electrode 29 is provided between the first field plate 22 a positioned closest to a source side and the high-voltage wiring conductor 28.
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