| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based LED element which has a conductive oxide film used as a translucent electrode, and shows a superior light emission output. <P>SOLUTION: The GaN-based LED element includes a lamination composed of a plurality of GaN-based semiconductor layers including at least a light-emitting layer, and a p-type layer and an n-type layer sandwiching the light-emitting layer therebetween. The GaN-based LED element has a platelike body formed of a GaN-based semiconductor, and a conductive oxide film of a polycrystal structure formed on the surface of the platelike body. A plurality of openings are formed at the conductive oxide film, and irregularities are formed at platelike body surfaces that are exposed through the openings. <P>COPYRIGHT: (C)2008,JPO&INPIT |
