发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 In order to determine data stored in a memory cell of a resistive cross-point cell array, two reference cells having two different known resistance values (e.g., data "0" and data "1") are provided, and a difference in current between a selected cell and the reference cell having data "0" and a difference in current between the selected cell and the reference cell having data "1" are compared. By comparison with a current of the reference cell which has a parasitic current as with the selected cell and has known data "0"/"1", data can be determined while suppressing an influence of a parasitic current.
申请公布号 US2008205119(A1) 申请公布日期 2008.08.28
申请号 US20070953412 申请日期 2007.12.10
申请人 NAGAI HIROYASU;NAKAYAMA MASAYOSHI 发明人 NAGAI HIROYASU;NAKAYAMA MASAYOSHI
分类号 G11C11/00;G11C7/00 主分类号 G11C11/00
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