| 摘要 |
A nonvolatile semiconductor memory device includes a storage element which is programmed with information by breaking an insulating film by application of electrical stress to the storage element, a control switch which controls the application of electrical stress to the storage element, and a control circuit which controls conduction/nonconduction of the control switch. The device further includes a power supply circuit including a voltage generation circuit which generates a first voltage to cause the electrical stress in program operation, a sensing circuit which senses that the insulating film is broken down, and a counter circuit which controls the control circuit to interrupt the application of electrical stress to the storage element when a given period of time elapses after the sensing circuit senses that the insulating film is broken down.
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