| 摘要 |
A method for etching a gate in a semiconductor device is provided to decrease a line width of the gate by thinning a polycrystal silicon film using a thermal oxidation process and a cleaning process. A gate insulation film and a gate conductive film are formed on a substrate(110). The gate conductive film is etched to form a gate pattern. A portion of the gate pattern is etched to form a thermal oxidation film(115). The thermal oxidation film is removed. After the gate pattern forming process, the thermal oxidation film forming process is performed, such that a tapered profile of the gate pattern is completely oxidized. The gate pattern is formed, such that the substrate is not damaged. The gate pattern forming process is performed until the gate insulation film is exposed.
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