| 摘要 |
1,225,788. Superconductor devices. SIEMENS A.G. 14 June, 1968 [15 June, 1967], No. 28302/68. Heading H1K. A superconductor memory cell comprises a line-section having a portion which can be driven normal by a control line, and a by-pass circuit comprising two links which pass through a carrier plate on which the line-section and control line are mounted, the two links being joined by a bridge strip on the other side of the carrier plate. As shown, Fig. 1, a line section 1 of tin is provided with a by-pass circuit consisting of two links 2a, 2c joined by a bridge 2b all of tin. A control line 4 of lead crosses the line-section 1 at right-angles and is insulated from it by a layer of silicon dioxide (not shown). The links pass through a carrier plate 6 which supports the other conductors on its opposite surfaces. A plurality of such cells can be formed in a single carrier plate to provide a high density matrix. Non-destructive read-out may be achieved by forming the bridge 2b of lead and providing two further conductors on the lower face of the carrier plate, the first conductor (7) being of lead and extending at right-angles to the bridge (2b) and the second conductor (8) being of tin and extending parallel to the bridge (2b), Fig. 3 (not shown). To read the cell a current is passed through the first conductor (7) which switches the second conductor (8) to the normal state only if a persistent current is stored in the cell. The device is produced by forcing a tin plate against a perforated steel plate to form a pattern of pins on the surface. A plurality of such plates are placed in a bath and covered with a synthetic resin which is then hardened. The tin layers are removed by milling and the faces of the slab are smoothed to form a carrier plate having the desired pattern of tin links embedded in it. The various conductors are then deposited on the opposite faces of the carrier plate with interposed insulating layers as required. The conductors may be produced either by depositing a layer of metal over the surface and then photo-etching or by direct evaporation through a mask. |
