METHOD FOR MANUFACTURING OF THIN FILM TRANSISTOR PANEL

摘要

A method for manufacturing a thin film transistor is provided to reduce a critical dimension skew by dry-etching a transparent conductive layer without indium to form a pixel electrode. A gate wire including a gate line(22) and a gate electrode(26) is formed on an insulating substrate(10). A data wire including a source electrode(65) and a drain electrode(66) is formed to be insulated with the gate wire. A protective layer(70) is formed to cover the gate and data wires. The protective layer is etched to form a contact hole exposing the drain electrode. A transparent conductive layer without an indium element is deposited on the exposed drain electrode and the protective layer. The protective layer is dry-etched to form a pixel electrode(82). The transparent conductive layer is formed of one selected from a group consisting of ZAO(Al doped ZnO), ZGO(Ga doped ZnO), ZnO(Zinc Oxide), ZTO(Zinc Tin Oxide), and FTO(Fluorine doped Tin Oxide).