| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress a cost increase without complicating a manufacturing process when forming a thin-film transistor using an oxide semiconductor film represented by a zinc oxide, and to provide its manufacturing method. <P>SOLUTION: In the semiconductor device in which a gate electrode is formed on a substrate, a gate insulating film is formed to cover the gate electrode, an oxide semiconductor film is formed on the gate insulating film, and a first conductive film and a second conductive film are formed on the oxide semiconductor film. The oxide semiconductor film has at least a region crystallized in a channel forming region. <P>COPYRIGHT: (C)2007,JPO&INPIT |
