| 摘要 |
PROBLEM TO BE SOLVED: To obtain more simply and exactly a dielectric breakdown life of a gate insulating film, in a semiconductor element having a gate insulating film using a high-permittivity insulating film. SOLUTION: After a kind of minority carrier among currents passing through an insulating film to be evaluated is obtained, a total amount Q of minority carrier injected till the insulating film specimen is brought to a dielectric breakdown is obtained by applying an electric stress to the insulating film specimen. After that, the amount of current I of the minority carrier passing through the insulating film to be evaluated, to which the stress voltage to obtain the life T<SB>BD</SB>of the insulating film to be evaluated is applied, is obtained. Finally, the life T<SB>BD</SB>is calculated based on a formula (1). COPYRIGHT: (C)2007,JPO&INPIT
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