| 摘要 |
PROBLEM TO BE SOLVED: To prevent failure in charge transfer, and to provide imaging signals of high quality by preventing remainder of a light shield film material in the groove between transfer electrodes. SOLUTION: The solid state imaging element comprises: a light receiver 2 for receiving light; and a charge transfer 3 which is provided with a charge transfer electrode 5 (a first electrode 5a and a second electrode 5b, in two-layer structure, are alternately provided in a plurality of numbers in a specified charge transfer electrode) which transfers signal charges from the light receiver 2 in one direction in top view and then transfers them in the direction across it, and allows transfer of signal charges read from the light receiver 2 in one direction as well as in the direction across it by applying a drive voltage to the charge transfer electrode 5. An oxide film 10 for preventing deposition of a light shielding film in a groove 9, so that the groove 9 between the second electrodes 5b is buried, is provided only on a specified charge transfer electrode side among the charge transfer electrode 5. COPYRIGHT: (C)2007,JPO&INPIT
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