Thin film transistor array panel and method for manufacturing the same

摘要

Disclosed is a thin film transistor array panel comprising an insulating substrate and a gate line formed on the insulating substrate. The gate line includes a first metal layer that contains aluminum (Al), a first cover layer formed on the gate line and a gate insulating layer formed on the cover layer. A semiconductor layer is provided on a predetermined portion of the gate insulating layer and a data line is formed on the gate insulating layer and the semiconductor layer. The semiconductor layer includes a source electrode, a drain electrode spaced apart from the source electrode by a predetermined distance. A pixel electrode connected to the electrode is provided.