| 摘要 |
PROBLEM TO BE SOLVED: To provide a gaseous diffusion plate which can make substrate processing uniformly in a wafer surface. SOLUTION: On the gaseous diffusion plate 9, a plurality of through holes for letting processing gas used in case of processing a substrate are provided. The through holes 11' and 11 provided in the perimeter region of the gaseous diffusion plate 9 are larger in the area of the inlet part than the area of an outlet part. If the substrate processing apparatus having this gaseous diffusion plate 9 is used, since the processing gas can be supplied uniformly within the gaseous diffusion plate, substrate processing, such as membranous deposition and membranous etching, can be performed uniformly. COPYRIGHT: (C)2006,JPO&NCIPI
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