| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase change memory having a high reliability as well as a high tolerance to repeated rewriting. SOLUTION: The phase change memory contains a phase change recording film formed on the main surface of a substrate, wherein an amorphous material having an atomic arrangement similar to that of the amorphous phase of the phase change recording film is brought into contact with the phase change recording film, and the phase change recording film is given a tensile strain. COPYRIGHT: (C)2006,JPO&NCIPI
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