Thin film capacity element composition, high-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, electronic circuit and electronic apparatus

摘要

A thin film capacity element composition includes a first bismuth layer-structured compound having positive temperature characteristics, that a specific permittivity rises as the temperature rises, in at least a part of a predetermined temperature range and a second bismuth layer-structured compound having negative temperature characteristics, that a specific permittivity declines as a temperature rises, in at least a part of said predetermined temperature range at any mixing ratio; wherein the bismuth layer-structured compound is expressed by a composition formula of Ca_xSr_(1-x)Bi₄Ti₄O₁₅.