| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem, wherein a microwave FET has small intrinsic Schottky junction capacitance or a p-n junction capacitance, so that these junctions are weak with respect to static electricity, meanwhile, increase of parasitic capacity due to connection to a protective diode causes deterioration of high frequency characteristics in a microwave device, so that this technique cannot be employed. <P>SOLUTION: A protective element comprising a first n<SP>+</SP>-type region, insulating region, and second n<SP>+</SP>-type region is connected between an element to be protected terminal and a GND terminal. The first n<SP>+</SP>-type region has columnar shape in the depthwise direction of a substrate, and the second n<SP>+</SP>-type region has a plate-like shape arranged, while facing the bottom of the first n<SP>+</SP>-type region. Consequently, a large electrostatic current can be made to flow to a ground potential by a first current channel and a second current channel, so that the electrostatic energy to the operation region of an HEMT is significantly attenuated, without increasing most of the parasitic capacities. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
