| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate processing apparatus capable of reliably performing etching to enhance yield, and to provide a semiconductor device manufacturing method. SOLUTION: A control unit 100 measures the temperature of processing liquid in a processing bath 30 at a given time after a semiconductor substrate 20 is immersed in the processing bath 30, calculates the difference between the measured temperature and that of the processing liquid in the processing bath 30 when a given filter is in use at the given time, calculates a processing time for etching the semiconductor substrate 20 based on the calculated temperature difference, and then etches the semiconductor substrate 20 based on the calculated processing time. COPYRIGHT: (C)2006,JPO&NCIPI
|
