发明名称 N-TYPE INORGANIC SEMICONDUCTOR, N-TYPE INORGANIC SEMICONDUCTOR THIN FILM AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an organic EL element and method of manufacturing the same, which has high emission luminance and is excellent in durability, even if drive power voltage is low, while extracting much light volume. SOLUTION: An organic electroluminescence element 100 has a structure in which at least a positive electrode layer 10, an electron hole injection layer 12, an organic light emitting layer 14 and a cathode layers 16 are sequentially laminated. The electron hole injection layer 12 is made of an n-type inorganic semiconductor material, and, when the Fermi energy of the electron hole injection layer 12 isΦ<SB>h</SB>and the Fermi energy of the positive electrode layer 10 isΦ<SB>a</SB>, the relation ofΦ<SB>h</SB>>Φ<SB>a</SB>is satisfied, and the absorption coefficient of the n-type inorganic semiconductor material is value of 1×10<SP>4</SP>cm<SP>-1</SP>or less. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006114928(A) 申请公布日期 2006.04.27
申请号 JP20050356649 申请日期 2005.12.09
申请人 IDEMITSU KOSAN CO LTD 发明人 NAKAMURA HIROAKI;KAWAMURA HISAYUKI;HOSOKAWA CHISHIO
分类号 H01L51/50;H05B33/10 主分类号 H01L51/50
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