| 摘要 |
A semiconductor device is disclosed that includes a substrate, a first wiring structure arranged on the substrate which first wiring structure includes a first insulating layer and a first wiring layer arranged within the first insulating layer, a second wiring structure arranged on the first wiring structure which second wiring structure includes a second insulating layer including a shock absorbing layer made of an insulating film and a second wiring layer arranged within the second insulating layer, and a third wiring structure arranged on the second wiring structure which third wiring structure includes a third insulating layer and a third wiring layer arranged within the third insulating layer. The fracture toughness value of the shock absorbing layer is arranged to be greater than the fracture toughness value of the first insulating film and the fracture toughness value of the third insulating film.
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