| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method that can improve hole mobility by applying a single axis compression stress from an SiGe mixed crystal layer to a p-channel area for a semiconductor device having the p channel. <P>SOLUTION: When a trench is built on a silicon substrate for a source area and a drain area and then the trench is filled epytaxially via the SiGe mixed crystal layer, the side wall of the trench is built using multiple facets and the atomic concentration of Ge in the SiGe mixed crystal layer is increased beyond 20%. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
