| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can avoid the influence of a change in characteristics due to a heat treatment, membrane stress of an insulation resin layer, etc. and can easily be adjusted to desired characteristics by trimming, and also to provide its manufacturing method. <P>SOLUTION: The semiconductor device 10A comprises a semiconductor substrate 1 including elements 2 and fuses 3 for trimming; first pads 5 for trimming formed on the semiconductor substrate 1 to cause current for cutting off the fuses to flow to the fuses 3 for trimming; an insulation resin layer 11 which is so formed as to cover the semiconductor substrate 1, and has openings 13 at positions matching with the first pads 5 for trimming; and second pads 17 for trimming which are formed on the insulation resin layer 11, and are connected to the first pads 5 for trimming via the openings 13 formed in the insulation resin layer 11. After forming the insulation resin layer 11, trimming is conducted on the semiconductor device 10A via the second pads 17 for trimming. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
