发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF
摘要 <p>A thin film transistor array substrate and a method for manufacturing the same are provided to stably attach a D-IC(Drive Integrated Circuit) by forming a transparent oxide metal covering an organic pattern formed on a pad unit. A lower electrode(34) of pad is formed on a substrate. An interlayer dielectric(23) includes a first contact hole(24) that exposes the lower electrode of pad. The interlayer dielectric is formed on the substrate. An intermediate electrode(38) of pad includes an aluminium-based metal layer and an upper metal layer. The upper metal layer includes metal except for aluminium to be laminated on the aluminium-based metal layer. The intermediate electrode of pad is connected to a pad lower electrode through the first contact hole. An organic pattern(25b) includes a second contact hole(27) that exposes an upper surface of the intermediate electrode of pad. The organic pattern covers a side of the intermediate electrode of pad. A upper electrode(39) of pad is connected to the intermediate electrode of pad through the second contact hole and covers an exposed surface of the organic pattern. The upper electrode of pad includes transparent oxide metal.</p>
申请公布号 KR20080084393(A) 申请公布日期 2008.09.19
申请号 KR20070026078 申请日期 2007.03.16
申请人 LG DISPLAY CO., LTD. 发明人 UHM, MIN SUK;LEE, MYEONG SIK
分类号 H01L29/786 主分类号 H01L29/786
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