发明名称 |
SOURCE HEAD ARC CHAMBER OF ION INJECTION APPARATUS |
摘要 |
A source head arc chamber of an ion implantation apparatus is provided to prevent a breaking effect of a filament and to lengthen a lifetime of the filament by using a heater. A chamber(110) is used for receiving and storing gas. A filament(120) is installed in the chamber. A heater(130) is formed to generate thermal electrons by heating the filament. A power supply unit(140) supplies power to the heater to operate the heater. A reflector(150) is formed to reflect the thermal electrons of the filament. The filament is connected to the heater through a heating bar. The reflector has a dual type reflector structure which is disposed opposite to each other. A dual gas supply line is installed in the chamber.
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申请公布号 |
KR20080084002(A) |
申请公布日期 |
2008.09.19 |
申请号 |
KR20070025014 |
申请日期 |
2007.03.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
DO, HAK YOUNG |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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