发明名称 SOURCE HEAD ARC CHAMBER OF ION INJECTION APPARATUS
摘要 A source head arc chamber of an ion implantation apparatus is provided to prevent a breaking effect of a filament and to lengthen a lifetime of the filament by using a heater. A chamber(110) is used for receiving and storing gas. A filament(120) is installed in the chamber. A heater(130) is formed to generate thermal electrons by heating the filament. A power supply unit(140) supplies power to the heater to operate the heater. A reflector(150) is formed to reflect the thermal electrons of the filament. The filament is connected to the heater through a heating bar. The reflector has a dual type reflector structure which is disposed opposite to each other. A dual gas supply line is installed in the chamber.
申请公布号 KR20080084002(A) 申请公布日期 2008.09.19
申请号 KR20070025014 申请日期 2007.03.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 DO, HAK YOUNG
分类号 H01L21/265 主分类号 H01L21/265
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