发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>A semiconductor light emitting device and a multiple lead frame for the semiconductor light emitting device are provided to supply power supply potentials to all circuits disposed in a chip without increasing chip size by disposing a power supply line on a memory cell array. A nonvolatile semiconductor memory comprises a memory cell array(12A,12B), a power supply pad(19), a first page buffer(13A-mu,13B-mu), a plurality of bit lines(BL(M1)), and a first power supply line(Vss(M2)). The memory cell array includes a plurality of cell units. The power supply pad is disposed on one end in a first direction of the memory cell array. The first page buffer is disposed on the other end in the first direction of the memory cell array. The plurality of bit lines are disposed on the memory cell array while extending in the first direction. The first power supply line is disposed on the plurality of bit lines on the memory cell array to connect the power supply pad and the first page buffer.</p>
申请公布号 KR20080084655(A) 申请公布日期 2008.09.19
申请号 KR20080022893 申请日期 2008.03.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HOSONO KOJI;YOSHIHARA MASAHIRO;NAKAMURA DAI;KAI YOUICHI
分类号 H01L27/115 主分类号 H01L27/115
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