NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A nonvolatile memory apparatus and a method for forming the same are provided to prevent a program disturbance between memory cells by lowering an operation voltage. A semiconductor substrate(100) has a tip-type protrusion unit(112). A gate dielectric is formed on the semiconductor substrate. A floating gate(117a) is formed on the protrusion unit. An inter-gate dielectric(118b) is formed on the floating gate. A control gate electrode(119a) is formed on the inter-gate dielectric. The protrusion unit includes a vertical sidewall and a rounded sidewall. The rounded sidewall has a slope which is getting smaller or greater to the top. A selective gate electrode is separated from a first sidewall of the floating gate. The protrusion unit is arranged adjacently to a second sidewall of the floating gate opposite to the first sidewall of the floating gate. The protrusion unit includes the vertical sidewall in a direction of the first sidewall of the floating gate and the rounded sidewall in a direction of the second sidewall of the floating gate.