发明名称 METHOD FOR REPAIRING DEFECTS ON PHOTO MASK AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 <p>A method for repairing defects on an exposure mask is provided to repair the defected exposure mask by laying a DFPR(Dry Film Photoresist) on the defected part of the exposure mask and hardening the DFPR pattern through thermal processing. A method for repairing defects on an exposure mask includes the steps of: examining the exposure mask to find a defected pattern(230); attaching DFPR(Dry Film Photoresist) onto the defected pattern; subjecting the DFPR to exposure and development processes to repair the defect pattern; carrying out a thermal processing about a repaired DFPR pattern(270) to harden the DFPR pattern. The defect pattern of the exposure mask is displayed through coordinate value.</p>
申请公布号 KR20080084427(A) 申请公布日期 2008.09.19
申请号 KR20070026140 申请日期 2007.03.16
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JOON SEUK
分类号 H01L21/027 主分类号 H01L21/027
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