发明名称 METHOD OF FORMING CONDUCTIVE PATTERN, METHOD OF MANUFACTURING ORGANIC THIN-FILM TRANSISTOR, AND ORGANIC THIN-FILM TRANSISTOR MANUFACTURED BY THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method of more reliably forming a semiconductor material layer, an electrode, and a wiring pattern, especially the pattern of source and drain electrodes requiring precise patterning in a thin-film transistor, and to provide a method of forming a semiconductor channel having high mobility precisely with improved reproducibility together with the electrode pattern. SOLUTION: The method of forming a conductive pattern forming a patterned conductive layer on a substrate includes: a process for patterning an adhesive layer improving adhesiveness in a conductive layer to the substrate; a process for forming the conductive layer on one portion of the surface on which the adhesive layer is formed and no adhesive layer is formed; and a process for removing only the conductive layer formed on the substrate surface on which no adhesive layer is formed. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008159971(A) 申请公布日期 2008.07.10
申请号 JP20060348950 申请日期 2006.12.26
申请人 KONICA MINOLTA HOLDINGS INC 发明人 TAKEMURA CHIYOKO;HIRAI KATSURA
分类号 H01L21/336;H01L21/28;H01L21/288;H01L29/417;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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