MANUFACTURING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To efficiently evade the etching of silicon which is not an etching object in dry etching using an etching gas containing chlorine trifluoride. SOLUTION: The manufacturing device is provided with a nozzle 61 for discharging an inert gas for maintaining the concentration of the chlorine trifluoride in contact with a surface to which etching resistance of a silicon substrate 7 is not given low on a bottom surface being a second part compared with an upper surface being a first part. The silicon substrate 7 is attached such that the first part comes to the upstream relative to the second part in the flow path of the etching gas, and the nozzle 61 discharges the inert gas to a spot 62 to be downstream relative to the first part and to be upstream relative to the second part in the flow path. COPYRIGHT: (C)2008,JPO&INPIT