发明名称 |
Semiconductor memory device and method thereof |
摘要 |
A semiconductor memory device and method thereof are provided. The example semiconductor memory device may include a memory cell array including a plurality of memory cells, an expected data generating unit receiving a plurality of initial expected data through at least one address pad during a memory operation and generating a plurality of expected data based on the plurality of initial expected data, the at least one address pad being separate from a data input/output pad and a parallel bit test circuit generating test result data based on a plurality of read data and the plurality of expected data.
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申请公布号 |
US2008165596(A1) |
申请公布日期 |
2008.07.10 |
申请号 |
US20070000648 |
申请日期 |
2007.12.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
CHEON KWUN-SOO;LEE CHANG-YONG;CHUNG WON-KYUNG |
分类号 |
G11C7/00;G11C8/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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