发明名称 Semiconductor memory device and method thereof
摘要 A semiconductor memory device and method thereof are provided. The example semiconductor memory device may include a memory cell array including a plurality of memory cells, an expected data generating unit receiving a plurality of initial expected data through at least one address pad during a memory operation and generating a plurality of expected data based on the plurality of initial expected data, the at least one address pad being separate from a data input/output pad and a parallel bit test circuit generating test result data based on a plurality of read data and the plurality of expected data.
申请公布号 US2008165596(A1) 申请公布日期 2008.07.10
申请号 US20070000648 申请日期 2007.12.14
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 CHEON KWUN-SOO;LEE CHANG-YONG;CHUNG WON-KYUNG
分类号 G11C7/00;G11C8/00 主分类号 G11C7/00
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