SEMICONDUCTOR ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the warpage of a wafer and to further reduce leak current. SOLUTION: A field effect transistor 100 is provided with a semiconductor action layer 4 that is stacked on a substrate 1 with buffer layers 2 and 3 in between. The buffer layer 3 is formed by using a nitride compound semiconductor. A first layer 11 is made at such thickness that the leak current of the field effect transistor 100 to the thickness of the buffer 3 becomes nearly the lowest, and a second layer 12 formed by using a nitride compound semiconductor having higher Al composition ratio than the first layer 11 is stacked on the first layer 11 at such a temperature that the leak current of the field effect transistor 100 to the growth temperature of the first layer 11 becomes nearly the lowest. The buffer layer 3 is provided with a compound layer 10 wherein the first and second layers 11 and 12 are stacked. COPYRIGHT: (C)2008,JPO&INPIT