发明名称 Highly sensitive photo-sensing element and photo-sensing device using the same
摘要 The present invention provides an image display unit integrated with a photo-sensor, comprising a photo-sensing element with high sensitivity and low noise and a polycrystalline silicon TFT prepared at the same time on an insulating substrate using planer process. After a first electrode 11 and a second electrode 12 of the photo-sensing element are made of polycrystalline silicon film, a light receiving layer (photoelectric conversion layer) 13 of the photo-sensing element is prepared by amorphous silicon film on upper layer. In this case, a polycrystalline silicon TFT is prepared at the same time.
申请公布号 US2008164473(A1) 申请公布日期 2008.07.10
申请号 US20070000402 申请日期 2007.12.12
申请人 HITACHI DISPLAYS, LTD. 发明人 TAI MITSUHARU;MIYAZAWA TOSHIO
分类号 G02F1/135;G02F1/1368;H01L27/146;H01L29/786;H01L31/09;H04N5/32;H04N5/369 主分类号 G02F1/135
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