| 摘要 |
The invention relates to a non-volatile storage element comprising date connections (I 1 /O 1 , I 2 /O 2 ) and two MOS transistors ( 60,70 ) of a first conductivity type, the source connections of the transistors being connected to a second supply voltage connection ( 10 ). A drain connection of the MOS transistor ( 60 ) is connected to the data connection (I 1 ,O 1 ), and a drain connection of the MOS transistor ( 70 ) is connected to the data connection (I 2 /O 2 ), said MOS transistors ( 60, 70 ) being cross-coupled. The inventive storage element also comprises two cross-coupled floating gate MOS transistors ( 40, 50 ) of a second conductivity type, a drain connection of the MOS transistor ( 40 ) being connected to the data connection (I 1 /O 1 ), and a drain connection of the MOS transistor ( 50 ) being connected to the data connection (I 1 /O 1 ), and a drain connection of the MOS transistor ( 50 ) being connected to the data connection (I 2 /O 2 ). Said storage element further comprises two MOS transistors ( 20, 30 ) of a second conductivity type, the source connections thereof being connected to a first supply connection ( 12 ), the gate connections thereof being connected to a first common switching line ( 14 ), and the well connections thereof being connected to a third common control line ( 5 ). A drain connection of the MOS transistor ( 20 ) is connected to the source connection of the MOS transistor ( 50 ), and a drain connection of the MOS transistor ( 30 ) is connected to the source connection of the MOS transistor ( 50 ).
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