| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element the lifetime of which has been improved by a technique other than a semiconductor crystal growth technique. SOLUTION: The semiconductor laser element 10 includes a coating film 31 for adjustment in reflectance formed in a light-emitting portion of a semiconductor. The coating film 31 has a thickness d set to satisfy R(d, n)>R(d, n+0.01) and d>λ/n, where n represents a refraction index of the coating film for an oscillation wavelengthλ, and R(d, n) represents a reflectance at the light-emitting portion depending on the thickness d and the refraction index n. COPYRIGHT: (C)2008,JPO&INPIT
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